050-8163 rev a 12 - 2007 absolute maximum ratings thermal and mechanical characteristics symbol parameter ratings unit i d continuous drain current @ t c = 25c 4 a continuous drain current @ t c = 100c 2.7 i dm pulsed drain current 1 15 v gs gate - source voltage 30 v e as single pulse avalanche energy 2 310 mj i ar avalanche current, repetitive or non-repetitive 2a g d s single die fredfet typical applications ? zvs phase shifted and other full bridge ? half bridge ? pfc and other boost converter ? buck converter ? single and two switch forward ? flyback features ? fast switching with low emi ? low t rr for high reliability ? ultra low c rss for improved noise immunity ? low gate charge ? avalanche energy rated ? rohs compliant apt 4 f 120 k 1200v, 4a, 4.60 max, APT4F120K power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. n-channel fredfet symbol characteristic min typ max unit p d total power dissipation @ t c = 25c - - 225 w r jc junction to case thermal resistance - - .56 c/w r cs case to sink thermal resistance, flat, greased surface - .11 - t j , t stg operating and storage junction temperature range -55 - 150 c t l soldering temperature for 10 seconds (1.6mm from case) - - 300 w t package weight - 0.07 - oz -2-g torque mounting torque (to-220 package), 4-40 or m3 screw --10 inlbf - - 1.1 nm microsemi website - http://www.microsemi.com to-220
050-8163 rev a 12 - 2007 static characteristics t j = 25c unless otherwise speci ed source-drain diode characteristics dynamic characteristics t j = 25c unless otherwise speci ed 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 155.0mh, r g = 25 , i as = 2a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ned as a xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ned as a xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -8.32e-8/v ds ^2 + 3.49e-8/v ds + 1.30e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci cations and information contained herein. g d s APT4F120K symbol parameter test conditions min typ max unit v br(dss) drain-source breakdown voltage v gs = 0v, i d = 250 a 1200 v ? v br(dss) / ? t j breakdown voltage temperature coef cient reference to 25c, i d = 250 a 1.41 v/c r ds(on) drain-source on resistance 3 v gs = 10v, i d = 2a 3.82 4.60 v gs(th) gate-source threshold voltage v gs = v ds , i d = 1ma 345 v ? v gs(th) / ? t j threshold voltage temperature coef cient -10 mv/c i dss zero gate voltage drain current v ds = 1200v v gs = 0v t j = 25c 250 a t j = 125c 1000 i gss gate-source leakage current v gs = 30v 100 na symbol parameter test conditions min typ max unit g fs forward transconductance v ds = 50v, i d = 2a 4.5 s c iss input capacitance v gs = 0v, v ds = 25v f = 1mhz 1385 pf c rss reverse transfer capacitance 17 c oss output capacitance 100 c o(cr) 4 effective output capacitance, charge related v gs = 0v, v ds = 0v to 800v 40 c o(er) 5 effective output capacitance, energy related 20 q g total gate charge v gs = 0 to 10v, i d = 2a, v ds = 600v 43 nc q gs gate-source charge 7 q gd gate-drain charge 20 t d(on) turn-on delay time resistive switching v dd = 800v, i d = 2a r g = 10 6 , v gg = 15v 7.4 ns t r current rise time 4.4 t d(off) turn-off delay time 24 t f current fall time 6.9 symbol parameter test conditions min typ max unit i s continuous source current (body diode) 4 a i sm pulsed source current (body diode) 1 15 v sd diode forward voltage i sd = 2a, t j = 25c, v gs = 0v 0.8 1.3 v t rr reverse recovery time i sd = 2a 3 , di sd / dt = 100a/ s, v dd = 100v t j = 25c 170 195 ns t j = 125c 330 400 q rr reverse recovery charge t j = 25c .370 c t j = 125c .820 i rrm reverse recovery current t j = 25c 4.90 a t j = 125c 5.40 dv/dt peak recovery dv/dt i sd 2a, di/dt 1000a s, v dd = 800v, t j = 125c 20 v/ns mosfet symbol showing the integral reverse p-n junction diode (body diode)
050-8163 rev a 12 - 2007 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs = 6, 7, 8 & 9v v gs = 10v 5v t j = 125c t j = 25c t j = -55c t j = 125c t j = 150c i d = 2a v ds = 960v v ds = 240v v ds = 600v APT4F120K 4.5v t j = 125c t j = 25c t j = -55c v ds > i d(on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 2a c oss c iss t j = 150c t j = 25c c rss t j = 125c t j = 25c t j = -55c v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, reverse drain current vs source-to-drain voltage -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 1200 0 0.2 0.4 0.6 0.8 1.0 1.2 3.0 2.5 2.0 1.5 1.0 0.5 0 5 4 3 2 1 0 16 14 12 10 8 6 4 2 0 2,000 1,000 100 10 1 16 14 12 10 8 6 4 2 0
050-8163 rev a 12 - 2007 0 0.10 0.20 0.30 0.40 0.50 0.60 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 e3 100% sn plated to-220 (k) package outline 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 12. maximum effective transient thermal impedance junction-to-case vs pulse duration figure 11, transient thermal impedance model APT4F120K microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. us and foreign patents pending. all rights res erved. 0.239 0.323 0.0025 0.124 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext source 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 4.82 (.190) 3.56 (.140) 1.39 (.055) 0.51 (.020) 4.08 (.161) dia. 3.54 (.139) dimensions in millimeters and (inches) gate drain 6.85 (.270) 5.85 (.230) 1.77 (.070) 3-plcs. 1.15 (.045) 2.92 (.115) 2.04 (.080) 3.42 (.135) 2.54 (.100) 0.50 (.020) 0.41 (.016) 5.33 (.210) 4.83 (.190) drain 12.192 (.480) 9.912 (.390) 3.683 (.145) max. 1ms 100ms r ds(on) scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 dc line 100s i dm 10ms 13s 100s i dm 100ms 10ms 13s r ds(on) dc line t j = 150c t c = 25c 1ms i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area i d , drain current (a) 1 10 100 1200 1 10 100 1200 20 10 1 0.1 20 10 1 0.1 t j = 125c t c = 75c
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